14 switches - smt 14 - 8 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc174ms8 / 174MS8E gaas mmic t/r switch dc - 3 ghz v02.0805 general description features functional diagram ultra small package: msop8 high third order intercept: +60 dbm single positive supply: +3 to +10v high rf power capabilty electrical specifications, t a = +25 c, vdd = +5 vdc, 50 ohm system typical applications the hmc174ms8 / hmc174MS8E is ideal for: ? ism applications ? pcmcia wireless cards ? portable wireless the hmc174ms8 & hmc174MS8E are low-cost spdt switches in 8-lead msop packages for use in transmit-receive applications which require very low distortion at high signal power levels. the device can control signals from dc to 3.0 ghz and is especially suited for 900 mhz, 1.8 - 2.2 ghz, and 2.4 ghz ism applications with only 0.5 db loss. the design pro- vides exceptional intermodulation performance; pro- viding a +60 dbm third order intercept at 8 volt bias. rf1 and rf2 are re ective shorts when off. on- chip circuitry allows single positive supply operation at very low dc current with control inputs compatible with cmos and most ttl logic families. parameter frequency min. typ. max. units insertion loss dc - 1.0 ghz dc - 2.0 ghz dc - 2.5 ghz dc - 3.0 ghz 0.5 0.5 0.7 1.4 0.7 0.8 1.0 1.8 db db db db isolation dc - 1.0 ghz dc - 2.0 ghz dc - 2.5 ghz dc - 3.0 ghz 22 20 17 13 25 24 21 17 db db db db return loss dc - 1.0 ghz dc - 2.0 ghz dc - 2.5 ghz dc - 3.0 ghz 20 16 13 9 28 21 17 11 db db db db input power for 1db compression 0/8v control 0.5 - 1.0 ghz 0.5 - 3.0 ghz 35 34 39 38 dbm dbm input third order intercept 0/8v control 0.5 - 1.0 ghz 0.5 - 3.0 ghz 55 55 60 60 dbm dbm switching characteristics dc - 3.0 ghz trise, tfall (10/90% rf) ton, toff (50% ctl to 10/90% rf) 10 24 ns ns
14 switches - smt 14 - 9 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com insertion loss isolation return loss 25 30 35 40 45 compression (dbm) 2 4 6 8 10 12 bias (volts) 1db at 900mhz 0.1db at 1900mhz 0.1db at 900mhz 1db at 1900mhz input 0.1 and 1.0 db compression vs. bias voltage input third order intercept vs. bias voltage 35 40 45 50 55 60 65 ip3 (dbm) 2 4 6 8 10 12 bias ( volts ) 900mhz 1900mhz hmc174ms8 / 174MS8E gaas mmic t/r switch dc - 3 ghz v02.0805 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 0123 insertion loss (db) frequency (ghz) -40 -30 -20 -10 0 0123 input return loss (db) frequency (ghz) -40 -30 -20 -10 0 0123 isolation (db) frequency (ghz)
14 switches - smt 14 - 10 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com distortion vs. bias voltage compression vs. bias voltages caution: do not operate in 1db compression at power levels above +35dbm and do not hot switch power levels greater than +23dbm (v dd = +5vdc). truth table *control input voltage tolerances are 0.2 vdc carrier at 900 mhz carrier at 1900 mhz bias vdd input power for 0.1 db compression input power for 1.0 db compression input power for 0.1 db compression input power for 1.0 db compression (volts) (dbm) (dbm) (dbm) (dbm) 327 31 26 30 430 34 29 33 532 36 31 35 836 39 35 38 10 37 40 36 39 1 watt carrier at 900 mhz 1 watt carrier at 1900 mhz bias vdd third order intercept second order intercept second harmonic third order intercept second order intercept second harmonic (volts) (dbm) (dbm) (dbc) (dbm) (dbm) (dbc) 343 71 45 42 78 55 448 85 55 46 88 65 553 90 56 51 87 58 860 90 58 60 90 59 10 60 90 59 60 90 60 bias control input* bias current control current control current signal path state vdd (vdc) a (vdc) b (vdc) idd (ua) ia (ua) ib (ua) rf to rf1 rf to rf2 30030-15-15offoff 30vdd25-250onoff 3vdd0250-25offon 500110-55-55offoff 5 0 vdd 115 -100 -15 on off 5vdd0 115-15-100offon 10 0 0 380 -190 -190 off off 10 0 vdd 495 -275 -220 on off 10 vdd 0 495 -220 -275 off on 5 -vdd vdd 600 -600 225 on off 5 vdd -vdd 600 225 -600 off on hmc174ms8 / 174MS8E gaas mmic t/r switch dc - 3 ghz v02.0805
14 switches - smt 14 - 11 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings bias voltage range (vdd) -0.2 to +12 vdc control voltage range (a & b) -0.2 to +vdd vdc storage temperature -65 to +150 c operating temperature -40 to +85 c esd sensitivity (hbm) class 1a electrostatic sensitive device observe handling precautions hmc174ms8 / 174MS8E gaas mmic t/r switch dc - 3 ghz v02.0805 notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. dimension does not include moldflash of 0.15mm per side. 4. dimension does not include moldflash of 0.25mm per side. 5. all ground leads must be soldered to pcb rf ground. part number package body material lead finish msl rating package marking [3] hmc174ms8 low stress injection molded plastic sn/pb solder msl1 [1] h174 xxxx hmc174MS8E rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h174 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information
14 switches - smt 14 - 12 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com notes: 1. set logic gate and switch vdd = +3v to +5v and use hct series logic to provide a ttl driver interface. 2. control inputs a/b can be driven directly with cmos logic (hc) with vdd of 3 to 8 volts applied to the cmos logic gates and to pin 4 of the rf switch. 3. dc blocking capacitors are required for each rf port as shown. capacitor value determines lowest frequency of operation. 4. highest rf signal power capability is achieved with v set to +10v. the switch will operate properly (but at lower rf power capability) at bias voltages down to +3v. typical application circuit hmc174ms8 / 174MS8E gaas mmic t/r switch dc - 3 ghz v02.0805
14 switches - smt 14 - 13 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com evaluation circuit board the circuit board used in the nal application should be generated with proper rf circuit design tech- niques. signal lines at the rf port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. the eval- uation circuit board shown above is available from hittite microwave corporation upon request. item description j1 - j3 pcb mount sma rf connector j4 - j7 dc pin c1 - c3 100 pf capacitor, 0402 pkg. c4 10,000 pf capacitor, 0603 pkg. u1 hmc174ms8 / hmc174MS8E t/r switch pcb [2] 104122 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc174ms8 / 174MS8E gaas mmic t/r switch dc - 3 ghz v02.0805 list of materials for evaluation pcb 104124 [1]
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